Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRLB3813PBF

IRLB3813PBF

For Reference Only

Part Number IRLB3813PBF
PNEDA Part # IRLB3813PBF
Description MOSFET N-CH 30V 260A TO-220AB
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 27,492
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRLB3813PBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRLB3813PBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRLB3813PBF Datasheet
  • where to find IRLB3813PBF
  • Infineon Technologies

  • Infineon Technologies IRLB3813PBF
  • IRLB3813PBF PDF Datasheet
  • IRLB3813PBF Stock

  • IRLB3813PBF Pinout
  • Datasheet IRLB3813PBF
  • IRLB3813PBF Supplier

  • Infineon Technologies Distributor
  • IRLB3813PBF Price
  • IRLB3813PBF Distributor

IRLB3813PBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C260A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.95mOhm @ 60A, 10V
Vgs(th) (Max) @ Id2.35V @ 150µA
Gate Charge (Qg) (Max) @ Vgs86nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds8420pF @ 15V
FET Feature-
Power Dissipation (Max)230W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

The Products You May Be Interested In

AON7418A

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1.7mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

65nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2994pF @ 15V

FET Feature

-

Power Dissipation (Max)

83W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-DFN-EP (3.3x3.3)

Package / Case

8-PowerWDFN

STH245N75F3-6

STMicroelectronics

Manufacturer

STMicroelectronics

Series

Automotive, AEC-Q101, STripFET™ F3

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

75V

Current - Continuous Drain (Id) @ 25°C

180A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3mOhm @ 90A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

87nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6800pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

H2PAK-6

Package / Case

TO-263-7, D²Pak (6 Leads + Tab)

TK55S10N1,LQ

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSVIII-H

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

55A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

6.5mOhm @ 27.5A, 10V

Vgs(th) (Max) @ Id

4V @ 500µA

Gate Charge (Qg) (Max) @ Vgs

49nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3280pF @ 10V

FET Feature

-

Power Dissipation (Max)

157W (Tc)

Operating Temperature

175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK+

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Manufacturer

Nexperia USA Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

57A (Tj)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

16mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

49nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2404pF @ 50V

FET Feature

-

Power Dissipation (Max)

148W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1100V

Current - Continuous Drain (Id) @ 25°C

40A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

260mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

6.5V @ 8mA

Gate Charge (Qg) (Max) @ Vgs

300nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

14000pF @ 25V

FET Feature

-

Power Dissipation (Max)

1560W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PLUS264™

Package / Case

TO-264-3, TO-264AA

Recently Sold

L5973ADTR

L5973ADTR

STMicroelectronics

IC REG BUCK ADJUSTABLE 2A 8HSOP

AS1360-33-T

AS1360-33-T

ams

IC REG LINEAR 3.3V 150MA SOT23-3

MMSZ5231BT1G

MMSZ5231BT1G

ON Semiconductor

DIODE ZENER 5.1V 500MW SOD123

PIC18F1220-I/SO

PIC18F1220-I/SO

Microchip Technology

IC MCU 8BIT 4KB FLASH 18SOIC

S202T01

S202T01

Sharp Microelectronics

SSR RELAY SPST-NO 2A 80-240V

MAX31865ATP+

MAX31865ATP+

Maxim Integrated

IC RTD TO DIGITAL CONVERT 20QFN

MC78M05ABDTRKG

MC78M05ABDTRKG

ON Semiconductor

IC REG LINEAR 5V 500MA DPAK

24LC64-I/SN

24LC64-I/SN

Microchip Technology

IC EEPROM 64K I2C 400KHZ 8SOIC

ACPL-M21L-500E

ACPL-M21L-500E

Broadcom

OPTOISO 3.75KV PUSH PULL 5SO

W25Q256JVFIQ

W25Q256JVFIQ

Winbond Electronics

IC FLASH 256M SPI 133MHZ 16SOIC

MAX14780EESA+T

MAX14780EESA+T

Maxim Integrated

IC TRANSCEIVER HALF 1/1 8SOIC

IHLP4040DZERR56M11

IHLP4040DZERR56M11

Vishay Dale

FIXED IND 560NH 32A 1.8 MOHM SMD