Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRLI530NPBF

IRLI530NPBF

For Reference Only

Part Number IRLI530NPBF
PNEDA Part # IRLI530NPBF
Description MOSFET N-CH 100V 12A TO220FP
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 87,132
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 1 - May 6 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRLI530NPBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRLI530NPBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRLI530NPBF Datasheet
  • where to find IRLI530NPBF
  • Infineon Technologies

  • Infineon Technologies IRLI530NPBF
  • IRLI530NPBF PDF Datasheet
  • IRLI530NPBF Stock

  • IRLI530NPBF Pinout
  • Datasheet IRLI530NPBF
  • IRLI530NPBF Supplier

  • Infineon Technologies Distributor
  • IRLI530NPBF Price
  • IRLI530NPBF Distributor

IRLI530NPBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Rds On (Max) @ Id, Vgs100mOhm @ 9A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs34nC @ 5V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds800pF @ 25V
FET Feature-
Power Dissipation (Max)41W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB Full-Pak
Package / CaseTO-220-3 Full Pack

The Products You May Be Interested In

2SK3309(Q)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

450V

Current - Continuous Drain (Id) @ 25°C

10A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

650mOhm @ 5A, 10V

Vgs(th) (Max) @ Id

5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

23nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

920pF @ 10V

FET Feature

-

Power Dissipation (Max)

65W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220FL

Package / Case

TO-220-3, Short Tab

FDD850N10LD

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

15.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

75mOhm @ 12A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

28.9nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1465pF @ 25V

FET Feature

-

Power Dissipation (Max)

42W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252-4L

Package / Case

TO-252-5, DPak (4 Leads + Tab), TO-252AD

CMPDM203NH BK

Central Semiconductor Corp

Manufacturer

Central Semiconductor Corp

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

3.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

50mOhm @ 1.6A, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

10nC @ 4.5V

Vgs (Max)

12V

Input Capacitance (Ciss) (Max) @ Vds

395pF @ 10V

FET Feature

-

Power Dissipation (Max)

350mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23F

Package / Case

SOT-23-3 Flat Leads

NTBV5605T4G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

18.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

5V

Rds On (Max) @ Id, Vgs

140mOhm @ 8.5A, 5V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

22nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1190pF @ 25V

FET Feature

-

Power Dissipation (Max)

88W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

NTLGF3402PT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

FETKY™

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

2.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

140mOhm @ 2.7A, 4.5V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

10nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

350pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.14W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-DFN (3x3)

Package / Case

6-VDFN Exposed Pad

Recently Sold

2SC4793(F,M)

2SC4793(F,M)

Toshiba Semiconductor and Storage

TRANS NPN 230V 1A TO220NIS

T495D337K006ATE040

T495D337K006ATE040

KEMET

CAP TANT 330UF 10% 6.3V 2917

MAX809SEUR+T

MAX809SEUR+T

Maxim Integrated

IC MPU/RESET CIRC SOT23-3

954206AGLF

954206AGLF

IDT, Integrated Device Technology

IC TIMING CTRL HUB P4 56-TSSOP

B320A-13-F

B320A-13-F

Diodes Incorporated

DIODE SCHOTTKY 20V 3A SMA

SII1161CTU

SII1161CTU

Lattice Semiconductor Corporation

UXGA PANELLINK RECEIVER

AT93C57W-10SC

AT93C57W-10SC

Microchip Technology

IC EEPROM 2K SPI 2MHZ 8SOIC

NFE31PT222Z1E9L

NFE31PT222Z1E9L

Murata

FILTER LC(T) 2200PF SMD

1N4148WS-7-F

1N4148WS-7-F

Diodes Incorporated

DIODE GEN PURP 75V 150MA SOD323

IHLP2525CZERR33M01

IHLP2525CZERR33M01

Vishay Dale

FIXED IND 330NH 20A 3.9 MOHM SMD

ADP1708ACPZ-R7

ADP1708ACPZ-R7

Analog Devices

IC REG LINEAR POS ADJ 1A 8LFCSP

SS36FA

SS36FA

ON Semiconductor

DIODE SCHOTTKY 60V 3A SOD123FA