Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRLR3714ZPBF

IRLR3714ZPBF

For Reference Only

Part Number IRLR3714ZPBF
PNEDA Part # IRLR3714ZPBF
Description MOSFET N-CH 20V 37A DPAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,686
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 15 - Jun 20 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRLR3714ZPBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRLR3714ZPBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRLR3714ZPBF, IRLR3714ZPBF Datasheet (Total Pages: 12, Size: 262.83 KB)
PDFIRLR3714ZTRPBF Datasheet Cover
IRLR3714ZTRPBF Datasheet Page 2 IRLR3714ZTRPBF Datasheet Page 3 IRLR3714ZTRPBF Datasheet Page 4 IRLR3714ZTRPBF Datasheet Page 5 IRLR3714ZTRPBF Datasheet Page 6 IRLR3714ZTRPBF Datasheet Page 7 IRLR3714ZTRPBF Datasheet Page 8 IRLR3714ZTRPBF Datasheet Page 9 IRLR3714ZTRPBF Datasheet Page 10 IRLR3714ZTRPBF Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRLR3714ZPBF Datasheet
  • where to find IRLR3714ZPBF
  • Infineon Technologies

  • Infineon Technologies IRLR3714ZPBF
  • IRLR3714ZPBF PDF Datasheet
  • IRLR3714ZPBF Stock

  • IRLR3714ZPBF Pinout
  • Datasheet IRLR3714ZPBF
  • IRLR3714ZPBF Supplier

  • Infineon Technologies Distributor
  • IRLR3714ZPBF Price
  • IRLR3714ZPBF Distributor

IRLR3714ZPBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C37A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs15mOhm @ 15A, 10V
Vgs(th) (Max) @ Id2.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs7.1nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds560pF @ 10V
FET Feature-
Power Dissipation (Max)35W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

FDMC86340

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

14A (Ta), 48A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

8V, 10V

Rds On (Max) @ Id, Vgs

6.5mOhm @ 14A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

53nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3885pF @ 40V

FET Feature

-

Power Dissipation (Max)

2.3W (Ta), 54W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

Power33

Package / Case

8-PowerWDFN

NP60N03KUG-E1-AY

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

60A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4.8mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

93nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5300pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.8W (Ta), 88W (Tc)

Operating Temperature

175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IRLML0040TRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

3.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

56mOhm @ 3.6A, 10V

Vgs(th) (Max) @ Id

2.5V @ 25µA

Gate Charge (Qg) (Max) @ Vgs

3.9nC @ 4.5V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

266pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.3W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

Micro3™/SOT-23

Package / Case

TO-236-3, SC-59, SOT-23-3

R5009ANX

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

9A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

720mOhm @ 4.5A, 10V

Vgs(th) (Max) @ Id

4.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

21nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

650pF @ 25V

FET Feature

-

Power Dissipation (Max)

50W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220FM

Package / Case

TO-220-3 Full Pack

FDP55N06

ON Semiconductor

Manufacturer

ON Semiconductor

Series

UniFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

55A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

22mOhm @ 27.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

37nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

1510pF @ 25V

FET Feature

-

Power Dissipation (Max)

114W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3

Recently Sold

BAV70

BAV70

Panasonic Electronic Components

DIODE ARRAY GP 80V 200MA SOT23-3

TAJD107K020RNJ

TAJD107K020RNJ

CAP TANT 100UF 10% 20V 2917

UES1302

UES1302

Microsemi

DIODE GEN PURP 100V 6A AXIAL

MBR4045PT

MBR4045PT

Diodes Incorporated

DIODE ARRAY SCHOTTKY 45V TO3P

B3F-1000

B3F-1000

Omron Electronics Inc-EMC Div

SWITCH TACTILE SPST-NO 0.05A 24V

2920L150DR

2920L150DR

Littelfuse

PTC RESET FUSE 33V 1.5A 2920

LTC4303IMS8#TRPBF

LTC4303IMS8#TRPBF

Linear Technology/Analog Devices

IC ACCELERATOR I2C HOTSWAP 8MSOP

SI2347DS-T1-GE3

SI2347DS-T1-GE3

Vishay Siliconix

MOSFET P-CH 30V 5A SOT-23

CS5173EDR8G

CS5173EDR8G

ON Semiconductor

IC REG MULT CONFG ADJ 1.5A 8SOIC

CXA-0359

CXA-0359

TDK

INVERTER DC/DC

AD8032ARMZ

AD8032ARMZ

Analog Devices

IC OPAMP VFB 2 CIRCUIT 8MSOP

TCMT4100

TCMT4100

Vishay Semiconductor Opto Division

OPTOISO 3.75KV 4CH TRANS 16-SOP