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IRLR4343TRR

IRLR4343TRR

For Reference Only

Part Number IRLR4343TRR
PNEDA Part # IRLR4343TRR
Description MOSFET N-CH 55V 26A DPAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,520
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 20 - Jun 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRLR4343TRR Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRLR4343TRR
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRLR4343TRR, IRLR4343TRR Datasheet (Total Pages: 11, Size: 249.58 KB)
PDFIRLR4343-701PBF Datasheet Cover
IRLR4343-701PBF Datasheet Page 2 IRLR4343-701PBF Datasheet Page 3 IRLR4343-701PBF Datasheet Page 4 IRLR4343-701PBF Datasheet Page 5 IRLR4343-701PBF Datasheet Page 6 IRLR4343-701PBF Datasheet Page 7 IRLR4343-701PBF Datasheet Page 8 IRLR4343-701PBF Datasheet Page 9 IRLR4343-701PBF Datasheet Page 10 IRLR4343-701PBF Datasheet Page 11

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IRLR4343TRR Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C26A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs50mOhm @ 4.7A, 10V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs42nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds740pF @ 50V
FET Feature-
Power Dissipation (Max)79W (Tc)
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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