Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRLR8726TRLPBF

IRLR8726TRLPBF

For Reference Only

Part Number IRLR8726TRLPBF
PNEDA Part # IRLR8726TRLPBF
Description MOSFET N-CH 30V 86A DPAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,326
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 19 - Jun 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRLR8726TRLPBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRLR8726TRLPBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRLR8726TRLPBF Datasheet
  • where to find IRLR8726TRLPBF
  • Infineon Technologies

  • Infineon Technologies IRLR8726TRLPBF
  • IRLR8726TRLPBF PDF Datasheet
  • IRLR8726TRLPBF Stock

  • IRLR8726TRLPBF Pinout
  • Datasheet IRLR8726TRLPBF
  • IRLR8726TRLPBF Supplier

  • Infineon Technologies Distributor
  • IRLR8726TRLPBF Price
  • IRLR8726TRLPBF Distributor

IRLR8726TRLPBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C86A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs5.8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id2.35V @ 50µA
Gate Charge (Qg) (Max) @ Vgs23nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2150pF @ 15V
FET Feature-
Power Dissipation (Max)75W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

STD11NM60N

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

10A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

450mOhm @ 5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

31nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

850pF @ 50V

FET Feature

-

Power Dissipation (Max)

90W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

IRLU2905PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

42A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

27mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

48nC @ 5V

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

1700pF @ 25V

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

Through Hole

Supplier Device Package

I-PAK

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

ISL9N303AS3ST

ON Semiconductor

Manufacturer

ON Semiconductor

Series

UltraFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

3.2mOhm @ 75A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

172nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

7000pF @ 15V

FET Feature

-

Power Dissipation (Max)

215W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263AB)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

STU6N65M2

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.35Ohm @ 2A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

9.8nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

226pF @ 100V

FET Feature

-

Power Dissipation (Max)

60W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

IPAK (TO-251)

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

AO5404E

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

500mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

550mOhm @ 500mA, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

1nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

45pF @ 10V

FET Feature

-

Power Dissipation (Max)

280mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-89-3

Package / Case

SC-89, SOT-490

Recently Sold

AT24RF08CN-10SC

AT24RF08CN-10SC

Microchip Technology

IC EEPROM 8K I2C 100KHZ 8SOIC

FNM-30

FNM-30

Eaton - Bussmann Electrical Division

FUSE CARTRIDGE 30A 250VAC 5AG

NRVBS3200T3G

NRVBS3200T3G

ON Semiconductor

DIODE SCHOTTKY 200V 3A SMB

B560CQ-13-F

B560CQ-13-F

Diodes Incorporated

DIODE SCHOTTKY 60V 5A SMC

WSL2010R0100FEA18

WSL2010R0100FEA18

Vishay Dale

RES 0.01 OHM 1% 1W 2010

STBB1-APUR

STBB1-APUR

STMicroelectronics

IC REG BCK BST ADJ 1.6A 10DFN

FA-20H 12.0000MD30Z-K3

FA-20H 12.0000MD30Z-K3

EPSON

CRYSTAL 12.00 MHZ 10.0PF SMD

LTST-C193TBKT-5A

LTST-C193TBKT-5A

Lite-On Inc.

LED BLUE CLEAR CHIP SMD

NC7SZ08P5X

NC7SZ08P5X

ON Semiconductor

IC GATE AND 1CH 2-INP SC70-5

24LC512T-I/SN

24LC512T-I/SN

Microchip Technology

IC EEPROM 512K I2C 400KHZ 8SOIC

MMSZ5229B-7-F

MMSZ5229B-7-F

Diodes Incorporated

DIODE ZENER 4.3V 500MW SOD123

SMBJ18CA-E3/52

SMBJ18CA-E3/52

Vishay Semiconductor Diodes Division

TVS DIODE 18V 29.2V DO214AA