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IXBH2N250

IXBH2N250

For Reference Only

Part Number IXBH2N250
PNEDA Part # IXBH2N250
Description IGBT 2500V 5A 32W TO247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 6,528
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXBH2N250 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXBH2N250
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IXBH2N250 Specifications

ManufacturerIXYS
SeriesBIMOSFET™
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)2500V
Current - Collector (Ic) (Max)5A
Current - Collector Pulsed (Icm)13A
Vce(on) (Max) @ Vge, Ic3.5V @ 15V, 2A
Power - Max32W
Switching Energy-
Input TypeStandard
Gate Charge10.6nC
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)920ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247AD (IXBH)

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

380A

Current - Collector Pulsed (Icm)

900A

Vce(on) (Max) @ Vge, Ic

1.7V @ 15V, 100A

Power - Max

1630W

Switching Energy

2.85mJ (on), 2.9mJ (off)

Input Type

Standard

Gate Charge

315nC

Td (on/off) @ 25°C

48ns/160ns

Test Condition

360V, 100A, 1Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-264-3, TO-264AA

Supplier Device Package

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

NPT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

9.4A

Current - Collector Pulsed (Icm)

19A

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 4A

Power - Max

50W

Switching Energy

131µJ

Input Type

Standard

Gate Charge

24nC

Td (on/off) @ 25°C

22ns/237ns

Test Condition

400V, 4A, 67Ohm, 15V

Reverse Recovery Time (trr)

180ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

PG-TO263-3

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

53A

Current - Collector Pulsed (Icm)

72A

Vce(on) (Max) @ Vge, Ic

1.95V @ 15V, 24A

Power - Max

200W

Switching Energy

90µJ (on), 600µJ (off)

Input Type

Standard

Gate Charge

50nC

Td (on/off) @ 25°C

40ns/100ns

Test Condition

400V, 24A, 10Ohm, 15V

Reverse Recovery Time (trr)

70ns

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AD

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

23A

Current - Collector Pulsed (Icm)

92A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 12A

Power - Max

100W

Switching Energy

160µJ (on), 200µJ (off)

Input Type

Standard

Gate Charge

50nC

Td (on/off) @ 25°C

17ns/78ns

Test Condition

480V, 12A, 23Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

AOT5B65M1

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

Alpha IGBT™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

10A

Current - Collector Pulsed (Icm)

15A

Vce(on) (Max) @ Vge, Ic

1.98V @ 15V, 5A

Power - Max

83W

Switching Energy

80µJ (on), 70µJ (off)

Input Type

Standard

Gate Charge

14nC

Td (on/off) @ 25°C

8.5ns/106ns

Test Condition

400V, 5A, 60Ohm, 15V

Reverse Recovery Time (trr)

195ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220

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