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IXBT20N300

IXBT20N300

For Reference Only

Part Number IXBT20N300
PNEDA Part # IXBT20N300
Description IGBT 3000V 50A 250W TO268
Manufacturer IXYS
Unit Price Request a Quote
In Stock 2,754
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXBT20N300 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXBT20N300
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXBT20N300, IXBT20N300 Datasheet (Total Pages: 5, Size: 174.66 KB)
PDFIXBT20N300 Datasheet Cover
IXBT20N300 Datasheet Page 2 IXBT20N300 Datasheet Page 3 IXBT20N300 Datasheet Page 4 IXBT20N300 Datasheet Page 5

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IXBT20N300 Specifications

ManufacturerIXYS
SeriesBIMOSFET™
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)3000V
Current - Collector (Ic) (Max)50A
Current - Collector Pulsed (Icm)140A
Vce(on) (Max) @ Vge, Ic3.2V @ 15V, 20A
Power - Max250W
Switching Energy-
Input TypeStandard
Gate Charge105nC
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)1.35µs
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device PackageTO-268

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

430µJ (on), 650µJ (off)

Input Type

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Package / Case

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Supplier Device Package

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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ON Semiconductor

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

23nC

Td (on/off) @ 25°C

6ns/40ns

Test Condition

390V, 12A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

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Diodes Incorporated

Manufacturer

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Series

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IGBT Type

Field Stop

Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

160A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

1.96mJ (on), 540µJ (off)

Input Type

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Gate Charge

341nC

Td (on/off) @ 25°C

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Test Condition

600V, 40A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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