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IXFA3N120-TRL

IXFA3N120-TRL

For Reference Only

Part Number IXFA3N120-TRL
PNEDA Part # IXFA3N120-TRL
Description MOSFET N-CH 1200V 3A TO-263
Manufacturer IXYS
Unit Price Request a Quote
In Stock 5,544
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFA3N120-TRL Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFA3N120-TRL
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IXFA3N120-TRL Specifications

ManufacturerIXYS
SeriesHiPerFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1200V
Current - Continuous Drain (Id) @ 25°C3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4.5Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs39nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1050pF @ 25V
FET Feature-
Power Dissipation (Max)200W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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