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IXFB38N100Q2

IXFB38N100Q2

For Reference Only

Part Number IXFB38N100Q2
PNEDA Part # IXFB38N100Q2
Description MOSFET N-CH 1000V 38A PLUS264
Manufacturer IXYS
Unit Price Request a Quote
In Stock 8,190
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 6 - May 11 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFB38N100Q2 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFB38N100Q2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFB38N100Q2, IXFB38N100Q2 Datasheet (Total Pages: 4, Size: 127.13 KB)
PDFIXFB38N100Q2 Datasheet Cover
IXFB38N100Q2 Datasheet Page 2 IXFB38N100Q2 Datasheet Page 3 IXFB38N100Q2 Datasheet Page 4

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IXFB38N100Q2 Specifications

ManufacturerIXYS
SeriesHiPerFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000V
Current - Continuous Drain (Id) @ 25°C38A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs250mOhm @ 19A, 10V
Vgs(th) (Max) @ Id5.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs250nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds13500pF @ 25V
FET Feature-
Power Dissipation (Max)890W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePLUS264™
Package / CaseTO-264-3, TO-264AA

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