Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

NVTFS6H854NTAG

NVTFS6H854NTAG

For Reference Only

Part Number NVTFS6H854NTAG
PNEDA Part # NVTFS6H854NTAG
Description TRENCH 8 80V NFET
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 3,276
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NVTFS6H854NTAG Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNVTFS6H854NTAG
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NVTFS6H854NTAG, NVTFS6H854NTAG Datasheet (Total Pages: 6, Size: 139.02 KB)
PDFNVTFS6H854NWFTAG Datasheet Cover
NVTFS6H854NWFTAG Datasheet Page 2 NVTFS6H854NWFTAG Datasheet Page 3 NVTFS6H854NWFTAG Datasheet Page 4 NVTFS6H854NWFTAG Datasheet Page 5 NVTFS6H854NWFTAG Datasheet Page 6

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • NVTFS6H854NTAG Datasheet
  • where to find NVTFS6H854NTAG
  • ON Semiconductor

  • ON Semiconductor NVTFS6H854NTAG
  • NVTFS6H854NTAG PDF Datasheet
  • NVTFS6H854NTAG Stock

  • NVTFS6H854NTAG Pinout
  • Datasheet NVTFS6H854NTAG
  • NVTFS6H854NTAG Supplier

  • ON Semiconductor Distributor
  • NVTFS6H854NTAG Price
  • NVTFS6H854NTAG Distributor

NVTFS6H854NTAG Specifications

ManufacturerON Semiconductor
SeriesAutomotive, AEC-Q101
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25°C9.5A (Ta), 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs14.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id4V @ 45µA
Gate Charge (Qg) (Max) @ Vgs13nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds770pF @ 40V
FET Feature-
Power Dissipation (Max)3.2W (Ta), 68W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-WDFN (3.3x3.3)
Package / Case8-PowerWDFN

The Products You May Be Interested In

IRL1404ZS

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

3.1mOhm @ 75A, 10V

Vgs(th) (Max) @ Id

2.7V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

110nC @ 5V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

5080pF @ 25V

FET Feature

-

Power Dissipation (Max)

230W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

SI4413DDY-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

5.5mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

1.6V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

114nC @ 10V

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

4780pF @ 15V

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-55°C ~ 125°C

Mounting Type

Surface Mount

Supplier Device Package

8-SOIC

Package / Case

8-SOIC (0.154", 3.90mm Width)

IPP65R110CFDAAKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

Automotive, AEC-Q101, CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

31.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

110mOhm @ 12.7A, 10V

Vgs(th) (Max) @ Id

4.5V @ 1.3mA

Gate Charge (Qg) (Max) @ Vgs

118nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3240pF @ 100V

FET Feature

-

Power Dissipation (Max)

277.8W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3

Package / Case

TO-220-3

STS9NF3LL

STMicroelectronics

Manufacturer

STMicroelectronics

Series

STripFET™ II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

9A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

19mOhm @ 4.5A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

17nC @ 5V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

800pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.5W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

FQP8P10

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

530mOhm @ 4A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

470pF @ 25V

FET Feature

-

Power Dissipation (Max)

65W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3

Recently Sold

MAX3645EEE+T

MAX3645EEE+T

Maxim Integrated

IC AMP LIMITING 16-QSOP

BNX024H01L

BNX024H01L

Murata

FILTER LC 4.7UF SMD

MMBD4148

MMBD4148

ON Semiconductor

DIODE GEN PURP 100V 200MA SOT23

S25FL256SAGBHIA00

S25FL256SAGBHIA00

Cypress Semiconductor

IC FLASH 256M SPI 133MHZ 24BGA

MX25U3235FM2I-10G

MX25U3235FM2I-10G

Macronix

IC FLASH 32M SPI 104MHZ 8SOP

JS202011JAQN

JS202011JAQN

C&K

SWITCH SLIDE DPDT 300MA 6V

4610X-101-103LF

4610X-101-103LF

Bourns

RES ARRAY 9 RES 10K OHM 10SIP

843002AKI-40LFT

843002AKI-40LFT

IDT, Integrated Device Technology

IC SYNTHESIZER LVPECL 32-VFQFPN

MTFC4GACAJCN-4M IT

MTFC4GACAJCN-4M IT

Micron Technology Inc.

IC FLASH 32G MMC 153VFBGA

ABLS2-12.000MHZ-D4Y-T

ABLS2-12.000MHZ-D4Y-T

Abracon

CRYSTAL 12.0000MHZ 18PF SMD

74HC14DR2G

74HC14DR2G

ON Semiconductor

IC INVERTER SCHMITT 6CH 14SOIC

MX25V1635FZNI

MX25V1635FZNI

Macronix

IC FLASH 16M SPI 80MHZ 8WSON