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IXFH10N100P

IXFH10N100P

For Reference Only

Part Number IXFH10N100P
PNEDA Part # IXFH10N100P
Description MOSFET N-CH 1KV 10A TO-247AD
Manufacturer IXYS
Unit Price Request a Quote
In Stock 2,862
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jul 15 - Jul 20 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFH10N100P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFH10N100P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFH10N100P, IXFH10N100P Datasheet (Total Pages: 4, Size: 178.1 KB)
PDFIXFH10N100P Datasheet Cover
IXFH10N100P Datasheet Page 2 IXFH10N100P Datasheet Page 3 IXFH10N100P Datasheet Page 4

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IXFH10N100P Specifications

ManufacturerIXYS
SeriesHiPerFET™, PolarP2™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000V
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.4Ohm @ 5A, 10V
Vgs(th) (Max) @ Id6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs56nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds3030pF @ 25V
FET Feature-
Power Dissipation (Max)380W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247AD (IXFH)
Package / CaseTO-247-3

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