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IXFH12N90P

IXFH12N90P

For Reference Only

Part Number IXFH12N90P
PNEDA Part # IXFH12N90P
Description MOSFET N-CH 900V 12A TO-247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 7,614
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFH12N90P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFH12N90P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFH12N90P, IXFH12N90P Datasheet (Total Pages: 4, Size: 179.13 KB)
PDFIXFV12N90PS Datasheet Cover
IXFV12N90PS Datasheet Page 2 IXFV12N90PS Datasheet Page 3 IXFV12N90PS Datasheet Page 4

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IXFH12N90P Specifications

ManufacturerIXYS
SeriesHiPerFET™, PolarP2™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)900V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs900mOhm @ 6A, 10V
Vgs(th) (Max) @ Id6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs56nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds3080pF @ 25V
FET Feature-
Power Dissipation (Max)380W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247AD (IXFH)
Package / CaseTO-247-3

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