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IXFH34N65X2

IXFH34N65X2

For Reference Only

Part Number IXFH34N65X2
PNEDA Part # IXFH34N65X2
Description MOSFET N-CH 650V 34A TO-247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 5,580
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 18 - May 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFH34N65X2 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFH34N65X2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFH34N65X2, IXFH34N65X2 Datasheet (Total Pages: 6, Size: 204.45 KB)
PDFIXFA34N65X2 Datasheet Cover
IXFA34N65X2 Datasheet Page 2 IXFA34N65X2 Datasheet Page 3 IXFA34N65X2 Datasheet Page 4 IXFA34N65X2 Datasheet Page 5 IXFA34N65X2 Datasheet Page 6

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IXFH34N65X2 Specifications

ManufacturerIXYS
SeriesHiPerFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C34A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs105mOhm @ 17A, 10V
Vgs(th) (Max) @ Id5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs56nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds3330pF @ 25V
FET Feature-
Power Dissipation (Max)540W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247
Package / CaseTO-247-3

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