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IXFK200N10P

IXFK200N10P

For Reference Only

Part Number IXFK200N10P
PNEDA Part # IXFK200N10P
Description MOSFET N-CH 100V 200A TO-264
Manufacturer IXYS
Unit Price Request a Quote
In Stock 4,320
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 12 - May 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFK200N10P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFK200N10P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFK200N10P, IXFK200N10P Datasheet (Total Pages: 5, Size: 194.96 KB)
PDFIXFX200N10P Datasheet Cover
IXFX200N10P Datasheet Page 2 IXFX200N10P Datasheet Page 3 IXFX200N10P Datasheet Page 4 IXFX200N10P Datasheet Page 5

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IXFK200N10P Specifications

ManufacturerIXYS
SeriesHiPerFET™, PolarP2™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C200A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs7.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs235nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds7600pF @ 25V
FET Feature-
Power Dissipation (Max)830W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-264AA (IXFK)
Package / CaseTO-264-3, TO-264AA

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