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IXFN110N85X

IXFN110N85X

For Reference Only

Part Number IXFN110N85X
PNEDA Part # IXFN110N85X
Description MOSFET N-CH 850V 110A SOT227B
Manufacturer IXYS
Unit Price Request a Quote
In Stock 7,578
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFN110N85X Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFN110N85X
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFN110N85X, IXFN110N85X Datasheet (Total Pages: 5, Size: 127.82 KB)
PDFIXFN110N85X Datasheet Cover
IXFN110N85X Datasheet Page 2 IXFN110N85X Datasheet Page 3 IXFN110N85X Datasheet Page 4 IXFN110N85X Datasheet Page 5

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IXFN110N85X Specifications

ManufacturerIXYS
SeriesHiPerFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)850V
Current - Continuous Drain (Id) @ 25°C110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs33mOhm @ 55A, 10V
Vgs(th) (Max) @ Id5.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs425nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds17000pF @ 25V
FET Feature-
Power Dissipation (Max)1170W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSOT-227B
Package / CaseSOT-227-4, miniBLOC

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