Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IXFN170N65X2

IXFN170N65X2

For Reference Only

Part Number IXFN170N65X2
PNEDA Part # IXFN170N65X2
Description MOSFET N-CH
Manufacturer IXYS
Unit Price Request a Quote
In Stock 5,940
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 7 - May 12 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFN170N65X2 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFN170N65X2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IXFN170N65X2 Datasheet
  • where to find IXFN170N65X2
  • IXYS

  • IXYS IXFN170N65X2
  • IXFN170N65X2 PDF Datasheet
  • IXFN170N65X2 Stock

  • IXFN170N65X2 Pinout
  • Datasheet IXFN170N65X2
  • IXFN170N65X2 Supplier

  • IXYS Distributor
  • IXFN170N65X2 Price
  • IXFN170N65X2 Distributor

IXFN170N65X2 Specifications

ManufacturerIXYS
SeriesHiPerFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C170A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs13mOhm @ 85A, 10V
Vgs(th) (Max) @ Id5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs434nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds27000pF @ 25V
FET Feature-
Power Dissipation (Max)1170W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSOT-227B
Package / CaseSOT-227-4, miniBLOC

The Products You May Be Interested In

IRF6795MTR1PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

32A (Ta), 160A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1.8mOhm @ 32A, 10V

Vgs(th) (Max) @ Id

2.35V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

53nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4280pF @ 13V

FET Feature

-

Power Dissipation (Max)

2.8W (Ta), 75W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DIRECTFET™ MX

Package / Case

DirectFET™ Isometric MX

IXTH60N25

IXYS

Manufacturer

IXYS

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

60A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

46mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

164nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4400pF @ 25V

FET Feature

-

Power Dissipation (Max)

400W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247 (IXTH)

Package / Case

TO-247-3

FQP4N25

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

3.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.75Ohm @ 1.8A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

5.6nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

200pF @ 25V

FET Feature

-

Power Dissipation (Max)

52W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3

FDD6N50FTM

ON Semiconductor

Manufacturer

ON Semiconductor

Series

UniFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

5.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.15Ohm @ 2.75A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

19.8nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

960pF @ 25V

FET Feature

-

Power Dissipation (Max)

89W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

SISS23DN-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

4.5mOhm @ 20A, 4.5V

Vgs(th) (Max) @ Id

900mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

300nC @ 10V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

8840pF @ 15V

FET Feature

-

Power Dissipation (Max)

4.8W (Ta), 57W (Tc)

Operating Temperature

-50°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® 1212-8S (3.3x3.3)

Package / Case

PowerPAK® 1212-8S

Recently Sold

ACF321825-103-TD01

ACF321825-103-TD01

TDK

FILTER LC(T) SMD

LM1458M

LM1458M

ON Semiconductor

IC OPAMP GP 2 CIRCUIT 8SOIC

0154002.DRT

0154002.DRT

Littelfuse

FUSE BOARD MNT 2A 125VAC/VDC SMD

UC3842BN

UC3842BN

ON Semiconductor

IC REG CTRLR BST FLYBK ISO 8-DIP

0467.750NR

0467.750NR

Littelfuse

FUSE BOARD MOUNT 750MA 32VAC/VDC

MC68HC908GP32CFB

MC68HC908GP32CFB

NXP

IC MCU 8BIT 32KB FLASH 44QFP

NAND128W3A2BN6E

NAND128W3A2BN6E

Micron Technology Inc.

IC FLASH 128M PARALLEL 48TSOP

64-2096PBF

64-2096PBF

Infineon Technologies

MOSFET N-CH 75V 160A D2PAK-7

CMS15(TE12L,Q,M)

CMS15(TE12L,Q,M)

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 60V 3A M-FLAT

FHAC0001ZXJ

FHAC0001ZXJ

Littelfuse

FUSE HLDR BLADE 32V 20A IN LINE

LG Q971-KN-1

LG Q971-KN-1

OSRAM Opto Semiconductors Inc.

LED GREEN DIFFUSED SMD

3296W-1-503LF

3296W-1-503LF

Bourns

TRIMMER 50K OHM 0.5W PC PIN TOP