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IXFN26N100P

IXFN26N100P

For Reference Only

Part Number IXFN26N100P
PNEDA Part # IXFN26N100P
Description MOSFET N-CH 1000V 23A SOT-227B
Manufacturer IXYS
Unit Price Request a Quote
In Stock 2,016
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFN26N100P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFN26N100P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFN26N100P, IXFN26N100P Datasheet (Total Pages: 4, Size: 110.04 KB)
PDFIXFN26N100P Datasheet Cover
IXFN26N100P Datasheet Page 2 IXFN26N100P Datasheet Page 3 IXFN26N100P Datasheet Page 4

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IXFN26N100P Specifications

ManufacturerIXYS
SeriesPolar™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000V
Current - Continuous Drain (Id) @ 25°C23A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs390mOhm @ 13A, 10V
Vgs(th) (Max) @ Id6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs197nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds11900pF @ 25V
FET Feature-
Power Dissipation (Max)595W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSOT-227B
Package / CaseSOT-227-4, miniBLOC

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