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IXFN32N60

IXFN32N60

For Reference Only

Part Number IXFN32N60
PNEDA Part # IXFN32N60
Description MOSFET N-CH 600V 32A SOT-227
Manufacturer IXYS
Unit Price Request a Quote
In Stock 3,960
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 20 - Jun 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFN32N60 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFN32N60
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFN32N60, IXFN32N60 Datasheet (Total Pages: 4, Size: 192.11 KB)
PDFIXFN32N60 Datasheet Cover
IXFN32N60 Datasheet Page 2 IXFN32N60 Datasheet Page 3 IXFN32N60 Datasheet Page 4

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IXFN32N60 Specifications

ManufacturerIXYS
SeriesHiPerFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs250mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id4.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs325nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds9000pF @ 25V
FET Feature-
Power Dissipation (Max)520AW (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSOT-227B
Package / CaseSOT-227-4, miniBLOC

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