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IXFN32N80P

IXFN32N80P

For Reference Only

Part Number IXFN32N80P
PNEDA Part # IXFN32N80P
Description MOSFET N-CH 800V 29A SOT-227B
Manufacturer IXYS
Unit Price Request a Quote
In Stock 5,580
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 14 - May 19 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFN32N80P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFN32N80P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFN32N80P, IXFN32N80P Datasheet (Total Pages: 4, Size: 92.6 KB)
PDFIXFN32N80P Datasheet Cover
IXFN32N80P Datasheet Page 2 IXFN32N80P Datasheet Page 3 IXFN32N80P Datasheet Page 4

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IXFN32N80P Specifications

ManufacturerIXYS
SeriesPolarHV™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C29A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs270mOhm @ 16A, 10V
Vgs(th) (Max) @ Id5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs150nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds8820pF @ 25V
FET Feature-
Power Dissipation (Max)625W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSOT-227B
Package / CaseSOT-227-4, miniBLOC

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