IXFN38N100P
For Reference Only
| Part Number | IXFN38N100P |
| PNEDA Part # | IXFN38N100P |
| Description | MOSFET N-CH 1000V 38A SOT-227B |
| Manufacturer | IXYS |
| Unit Price | Request a Quote |
| In Stock | 5,778 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 17 - Jun 22 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
IXFN38N100P Resources
| Brand | IXYS |
| ECAD Module |
|
| Mfr. Part Number | IXFN38N100P |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- IXFN38N100P Datasheet
- where to find IXFN38N100P
- IXYS
- IXYS IXFN38N100P
- IXFN38N100P PDF Datasheet
- IXFN38N100P Stock
- IXFN38N100P Pinout
- Datasheet IXFN38N100P
- IXFN38N100P Supplier
- IXYS Distributor
- IXFN38N100P Price
- IXFN38N100P Distributor
IXFN38N100P Specifications
| Manufacturer | IXYS |
| Series | HiPerFET™, PolarP2™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 1000V |
| Current - Continuous Drain (Id) @ 25°C | 38A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 210mOhm @ 19A, 10V |
| Vgs(th) (Max) @ Id | 6.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 350nC @ 10V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 24000pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 1000W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Supplier Device Package | SOT-227B |
| Package / Case | SOT-227-4, miniBLOC |
The Products You May Be Interested In
|
Manufacturer Nexperia USA Inc. Series Automotive, AEC-Q101, TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 75V Current - Continuous Drain (Id) @ 25°C 53A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 23mOhm @ 25A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2385pF @ 25V FET Feature - Power Dissipation (Max) 138W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer STMicroelectronics Series MDmesh™ II FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 68A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 43mOhm @ 34A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 178nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 5790pF @ 100V FET Feature - Power Dissipation (Max) 446W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247 Package / Case TO-247-3 |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 5.8A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 24mOhm @ 8A, 10V Vgs(th) (Max) @ Id 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) 1.3W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width) |
Manufacturer ON Semiconductor Series UniFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 250V Current - Continuous Drain (Id) @ 25°C 33A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 94mOhm @ 16.5A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 2135pF @ 25V FET Feature - Power Dissipation (Max) 37W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220F Package / Case TO-220-3 Full Pack |
Manufacturer Diodes Incorporated Series * FET Type - Technology - Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) - Operating Temperature - Mounting Type - Supplier Device Package - Package / Case - |
