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IXFN38N100Q2

IXFN38N100Q2

For Reference Only

Part Number IXFN38N100Q2
PNEDA Part # IXFN38N100Q2
Description MOSFET N-CH 1000V 38A SOT-227
Manufacturer IXYS
Unit Price Request a Quote
In Stock 7,038
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 20 - Jun 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFN38N100Q2 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFN38N100Q2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFN38N100Q2, IXFN38N100Q2 Datasheet (Total Pages: 4, Size: 563.82 KB)
PDFIXFN38N100Q2 Datasheet Cover
IXFN38N100Q2 Datasheet Page 2 IXFN38N100Q2 Datasheet Page 3 IXFN38N100Q2 Datasheet Page 4

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IXFN38N100Q2 Specifications

ManufacturerIXYS
SeriesHiPerFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000V
Current - Continuous Drain (Id) @ 25°C38A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs250mOhm @ 19A, 10V
Vgs(th) (Max) @ Id5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs250nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds7200pF @ 25V
FET Feature-
Power Dissipation (Max)890W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSOT-227B
Package / CaseSOT-227-4, miniBLOC

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