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IXFN50N120SK

IXFN50N120SK

For Reference Only

Part Number IXFN50N120SK
PNEDA Part # IXFN50N120SK
Description MOSFET N-CH
Manufacturer IXYS
Unit Price Request a Quote
In Stock 3,312
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 5 - May 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFN50N120SK Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFN50N120SK
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFN50N120SK, IXFN50N120SK Datasheet (Total Pages: 4, Size: 208.57 KB)
PDFIXFN50N120SK Datasheet Cover
IXFN50N120SK Datasheet Page 2 IXFN50N120SK Datasheet Page 3 IXFN50N120SK Datasheet Page 4

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IXFN50N120SK Specifications

ManufacturerIXYS
Series-
FET TypeN-Channel
TechnologySiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)1200V
Current - Continuous Drain (Id) @ 25°C48A (Tc)
Drive Voltage (Max Rds On, Min Rds On)20V
Rds On (Max) @ Id, Vgs52mOhm @ 40A, 20V
Vgs(th) (Max) @ Id2.8V @ 10mA
Gate Charge (Qg) (Max) @ Vgs115nC @ 20V
Vgs (Max)+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds1895pF @ 1000V
FET Feature-
Power Dissipation (Max)-
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSOT-227B
Package / CaseSOT-227-4, miniBLOC

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