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IXFN80N50Q3

IXFN80N50Q3

For Reference Only

Part Number IXFN80N50Q3
PNEDA Part # IXFN80N50Q3
Description MOSFET N-CH 500V 63A SOT-227
Manufacturer IXYS
Unit Price Request a Quote
In Stock 7,650
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 6 - May 11 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFN80N50Q3 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFN80N50Q3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFN80N50Q3, IXFN80N50Q3 Datasheet (Total Pages: 5, Size: 125.75 KB)
PDFIXFN80N50Q3 Datasheet Cover
IXFN80N50Q3 Datasheet Page 2 IXFN80N50Q3 Datasheet Page 3 IXFN80N50Q3 Datasheet Page 4 IXFN80N50Q3 Datasheet Page 5

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IXFN80N50Q3 Specifications

ManufacturerIXYS
SeriesHiPerFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C63A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs65mOhm @ 40A, 10V
Vgs(th) (Max) @ Id6.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs200nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds10000pF @ 25V
FET Feature-
Power Dissipation (Max)780W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSOT-227B
Package / CaseSOT-227-4, miniBLOC

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