IXFR12N100Q
For Reference Only
| Part Number | IXFR12N100Q |
| PNEDA Part # | IXFR12N100Q |
| Description | MOSFET N-CH 1000V 10A ISOPLUS247 |
| Manufacturer | IXYS |
| Unit Price | Request a Quote |
| In Stock | 3,600 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 23 - Jun 28 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IXFR12N100Q Resources
| Brand | IXYS |
| ECAD Module |
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| Mfr. Part Number | IXFR12N100Q |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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Logistics Mode
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- Delivery date: usually 2 to 7 working days.
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Notes
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IXFR12N100Q Specifications
| Manufacturer | IXYS |
| Series | HiPerFET™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 1000V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1.1Ohm @ 6A, 10V |
| Vgs(th) (Max) @ Id | 5.5V @ 4mA |
| Gate Charge (Qg) (Max) @ Vgs | 90nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2900pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | ISOPLUS247™ |
| Package / Case | ISOPLUS247™ |
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