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IXFR20N100P

IXFR20N100P

For Reference Only

Part Number IXFR20N100P
PNEDA Part # IXFR20N100P
Description MOSFET N-CH 1000V 11A ISOPLUS247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 7,776
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 11 - May 16 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFR20N100P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFR20N100P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFR20N100P, IXFR20N100P Datasheet (Total Pages: 4, Size: 107.42 KB)
PDFIXFR20N100P Datasheet Cover
IXFR20N100P Datasheet Page 2 IXFR20N100P Datasheet Page 3 IXFR20N100P Datasheet Page 4

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IXFR20N100P Specifications

ManufacturerIXYS
SeriesHiPerFET™, PolarP2™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000V
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs640mOhm @ 10A, 10V
Vgs(th) (Max) @ Id6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs126nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds7300pF @ 25V
FET Feature-
Power Dissipation (Max)230W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageISOPLUS247™
Package / CaseISOPLUS247™

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