IXFR20N100P
For Reference Only
| Part Number | IXFR20N100P |
| PNEDA Part # | IXFR20N100P |
| Description | MOSFET N-CH 1000V 11A ISOPLUS247 |
| Manufacturer | IXYS |
| Unit Price | Request a Quote |
| In Stock | 7,776 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 24 - Jun 29 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IXFR20N100P Resources
| Brand | IXYS |
| ECAD Module |
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| Mfr. Part Number | IXFR20N100P |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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IXFR20N100P Specifications
| Manufacturer | IXYS |
| Series | HiPerFET™, PolarP2™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 1000V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 640mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 6.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 126nC @ 10V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 7300pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 230W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | ISOPLUS247™ |
| Package / Case | ISOPLUS247™ |
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Manufacturer IXYS Series PolarHT™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 50A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 60mOhm @ 50A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2720pF @ 25V FET Feature - Power Dissipation (Max) 360W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-3P Package / Case TO-3P-3, SC-65-3 |
