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IXFR38N80Q2

IXFR38N80Q2

For Reference Only

Part Number IXFR38N80Q2
PNEDA Part # IXFR38N80Q2
Description MOSFET N-CH 800V 28A ISOPLUS247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 7,722
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 23 - May 28 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFR38N80Q2 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFR38N80Q2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFR38N80Q2, IXFR38N80Q2 Datasheet (Total Pages: 5, Size: 568.76 KB)
PDFIXFR38N80Q2 Datasheet Cover
IXFR38N80Q2 Datasheet Page 2 IXFR38N80Q2 Datasheet Page 3 IXFR38N80Q2 Datasheet Page 4 IXFR38N80Q2 Datasheet Page 5

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IXFR38N80Q2 Specifications

ManufacturerIXYS
SeriesHiPerFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs240mOhm @ 19A, 10V
Vgs(th) (Max) @ Id4.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs190nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds8340pF @ 25V
FET Feature-
Power Dissipation (Max)416W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageISOPLUS247™
Package / CaseISOPLUS247™

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