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IXFT16N120P

IXFT16N120P

For Reference Only

Part Number IXFT16N120P
PNEDA Part # IXFT16N120P
Description MOSFET N-CH 1200V 16A TO268
Manufacturer IXYS
Unit Price Request a Quote
In Stock 4,500
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 19 - May 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFT16N120P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFT16N120P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFT16N120P, IXFT16N120P Datasheet (Total Pages: 5, Size: 127.82 KB)
PDFIXFT16N120P Datasheet Cover
IXFT16N120P Datasheet Page 2 IXFT16N120P Datasheet Page 3 IXFT16N120P Datasheet Page 4 IXFT16N120P Datasheet Page 5

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IXFT16N120P Specifications

ManufacturerIXYS
SeriesHiPerFET™, PolarP2™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1200V
Current - Continuous Drain (Id) @ 25°C16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs950mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs120nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds6900pF @ 25V
FET Feature-
Power Dissipation (Max)660W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-268
Package / CaseTO-268-3, D³Pak (2 Leads + Tab), TO-268AA

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