Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IXFX160N30T

IXFX160N30T

For Reference Only

Part Number IXFX160N30T
PNEDA Part # IXFX160N30T
Description MOSFET N-CH 300V 160A PLUS247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 7,002
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 5 - May 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFX160N30T Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFX160N30T
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFX160N30T, IXFX160N30T Datasheet (Total Pages: 6, Size: 172.18 KB)
PDFIXFX160N30T Datasheet Cover
IXFX160N30T Datasheet Page 2 IXFX160N30T Datasheet Page 3 IXFX160N30T Datasheet Page 4 IXFX160N30T Datasheet Page 5 IXFX160N30T Datasheet Page 6

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IXFX160N30T Datasheet
  • where to find IXFX160N30T
  • IXYS

  • IXYS IXFX160N30T
  • IXFX160N30T PDF Datasheet
  • IXFX160N30T Stock

  • IXFX160N30T Pinout
  • Datasheet IXFX160N30T
  • IXFX160N30T Supplier

  • IXYS Distributor
  • IXFX160N30T Price
  • IXFX160N30T Distributor

IXFX160N30T Specifications

ManufacturerIXYS
SeriesGigaMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)300V
Current - Continuous Drain (Id) @ 25°C160A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs19mOhm @ 60A, 10V
Vgs(th) (Max) @ Id5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs335nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds28000pF @ 25V
FET Feature-
Power Dissipation (Max)1390W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePLUS247™-3
Package / CaseTO-247-3

The Products You May Be Interested In

SI4423DY-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

10A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

7.5mOhm @ 14A, 4.5V

Vgs(th) (Max) @ Id

900mV @ 600µA

Gate Charge (Qg) (Max) @ Vgs

175nC @ 5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

1.5W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

IRFPE50PBF

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

7.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.2Ohm @ 4.7A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

200nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3100pF @ 25V

FET Feature

-

Power Dissipation (Max)

190W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247-3

Package / Case

TO-247-3

FQD2N80TM_WS

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

1.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

6.3Ohm @ 900mA, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

550pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 50W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

IPB03N03LB

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

2.8mOhm @ 55A, 10V

Vgs(th) (Max) @ Id

2V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

59nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

7624pF @ 15V

FET Feature

-

Power Dissipation (Max)

150W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263AB)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IRF3710ZPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

59A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

18mOhm @ 35A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

120nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2900pF @ 25V

FET Feature

-

Power Dissipation (Max)

160W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

Recently Sold

ISL6124IRZA-T

ISL6124IRZA-T

Renesas Electronics America Inc.

IC POWER SUPPLY SEQUENCER 24QFN

G8QE-1A DC12

G8QE-1A DC12

Omron Electronics Inc-EMC Div

RELAY AUTOMOTIVE SPST 10A 12V

APHHS1005SECK

APHHS1005SECK

Kingbright

LED ORANGE CLEAR CHIP SMD

VLS252012HBX-2R2M-1

VLS252012HBX-2R2M-1

TDK

FIXED IND 2.2UH 2.3A 102 MOHM

MC14099BDWR2G

MC14099BDWR2G

ON Semiconductor

IC LATCH 8BIT ADDRESS 16-SOIC

TSM2323CX RFG

TSM2323CX RFG

Taiwan Semiconductor Corporation

MOSFET P-CHANNEL 20V 4.7A SOT23

MP24833GN-Z

MP24833GN-Z

Monolithic Power Systems Inc.

IC LED DRIVER

17-21SURC/S530-A3/TR8

17-21SURC/S530-A3/TR8

Everlight Electronics Co Ltd

LED RED CLEAR SMD

S558-5999-Q3-F

S558-5999-Q3-F

Bel Fuse

MODULE XFRMR LAN GIGABIT 48P SMD

ATMEGA48PA-AU

ATMEGA48PA-AU

Microchip Technology

IC MCU 8BIT 4KB FLASH 32TQFP

1SMB28AT3G

1SMB28AT3G

Littelfuse

TVS DIODE 28V 45.4V SMB

7447709680

7447709680

Wurth Electronics

FIXED IND 68UH 3.2A 89 MOHM SMD