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IXFX32N80Q3

IXFX32N80Q3

For Reference Only

Part Number IXFX32N80Q3
PNEDA Part # IXFX32N80Q3
Description MOSFET N-CH 800V 32A PLUS247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 6,360
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 11 - May 16 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFX32N80Q3 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFX32N80Q3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFX32N80Q3, IXFX32N80Q3 Datasheet (Total Pages: 5, Size: 119.66 KB)
PDFIXFX32N80Q3 Datasheet Cover
IXFX32N80Q3 Datasheet Page 2 IXFX32N80Q3 Datasheet Page 3 IXFX32N80Q3 Datasheet Page 4 IXFX32N80Q3 Datasheet Page 5

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IXFX32N80Q3 Specifications

ManufacturerIXYS
SeriesHiPerFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs270mOhm @ 16A, 10V
Vgs(th) (Max) @ Id6.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs140nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds6940pF @ 25V
FET Feature-
Power Dissipation (Max)1000W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePLUS247™-3
Package / CaseTO-247-3

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