Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IXFX38N80Q2

IXFX38N80Q2

For Reference Only

Part Number IXFX38N80Q2
PNEDA Part # IXFX38N80Q2
Description MOSFET N-CH 800V 38A PLUS247
Manufacturer IXYS
Unit Price
1 ---------- $231.4282
50 ---------- $220.5800
100 ---------- $209.7318
200 ---------- $198.8836
400 ---------- $189.8435
500 ---------- $180.8033
In Stock 117
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFX38N80Q2 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFX38N80Q2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFX38N80Q2, IXFX38N80Q2 Datasheet (Total Pages: 5, Size: 605.54 KB)
PDFIXFN38N80Q2 Datasheet Cover
IXFN38N80Q2 Datasheet Page 2 IXFN38N80Q2 Datasheet Page 3 IXFN38N80Q2 Datasheet Page 4 IXFN38N80Q2 Datasheet Page 5

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IXFX38N80Q2 Datasheet
  • where to find IXFX38N80Q2
  • IXYS

  • IXYS IXFX38N80Q2
  • IXFX38N80Q2 PDF Datasheet
  • IXFX38N80Q2 Stock

  • IXFX38N80Q2 Pinout
  • Datasheet IXFX38N80Q2
  • IXFX38N80Q2 Supplier

  • IXYS Distributor
  • IXFX38N80Q2 Price
  • IXFX38N80Q2 Distributor

IXFX38N80Q2 Specifications

ManufacturerIXYS
SeriesHiPerFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C38A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs220mOhm @ 19A, 10V
Vgs(th) (Max) @ Id4.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs190nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds8340pF @ 25V
FET Feature-
Power Dissipation (Max)735W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePLUS247™-3
Package / CaseTO-247-3

The Products You May Be Interested In

IXTT12N150

IXYS

Manufacturer

IXYS

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1500V

Current - Continuous Drain (Id) @ 25°C

12A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2Ohm @ 6A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

106nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

3720pF @ 25V

FET Feature

-

Power Dissipation (Max)

890W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-268

Package / Case

TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

CSD25485F5

Texas Instruments

Manufacturer

Series

FemtoFET™

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

3.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 8V

Rds On (Max) @ Id, Vgs

35mOhm @ 900mA, 8V

Vgs(th) (Max) @ Id

1.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

3.5nC @ 4.5V

Vgs (Max)

-12V

Input Capacitance (Ciss) (Max) @ Vds

533pF @ 10V

FET Feature

-

Power Dissipation (Max)

500mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

3-PICOSTAR

Package / Case

3-XFDFN

NTMS3P03R2

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

2.34A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

85mOhm @ 3.05A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

25nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

750pF @ 24V

FET Feature

-

Power Dissipation (Max)

730mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOIC

Package / Case

8-SOIC (0.154", 3.90mm Width)

DMS2220LFW-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

2.9A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

95mOhm @ 2.8A, 4.5V

Vgs(th) (Max) @ Id

1.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

632pF @ 10V

FET Feature

Schottky Diode (Isolated)

Power Dissipation (Max)

1.5W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-DFN3020 (3x2)

Package / Case

8-VDFN Exposed Pad

SQS850EN-T1_GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

12A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

21.5mOhm @ 6.1A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

41nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2021pF @ 30V

FET Feature

-

Power Dissipation (Max)

33W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® 1212-8

Package / Case

PowerPAK® 1212-8

Recently Sold

DS9503P+

DS9503P+

Maxim Integrated

TVS DIODE 7.5V 6TSOC

MAX3076EESD+

MAX3076EESD+

Maxim Integrated

IC TRANSCEIVER FULL 1/1 14SOIC

ISL80103IRAJZ

ISL80103IRAJZ

Renesas Electronics America Inc.

IC REG LINEAR POS ADJ 3A 10DFN

MAX3491EESD+T

MAX3491EESD+T

Maxim Integrated

IC TRANSCEIVER FULL 1/1 14SOIC

DN2540N8-G

DN2540N8-G

Microchip Technology

MOSFET N-CH 400V 0.17A SOT89-3

FAN3111ESX

FAN3111ESX

ON Semiconductor

IC GATE DVR SGL 1A EXTER SOT23-5

STM32H743VIT6

STM32H743VIT6

STMicroelectronics

IC MCU 32BIT 2MB FLASH 100LQFP

SMBJ15A-E3/52

SMBJ15A-E3/52

Vishay Semiconductor Diodes Division

TVS DIODE 15V 24.4V DO214AA

A42MX09-PQ100

A42MX09-PQ100

Microsemi

IC FPGA 83 I/O 100QFP

4608X-101-332LF

4608X-101-332LF

Bourns

RES ARRAY 7 RES 3.3K OHM 8SIP

SMCJ36CA

SMCJ36CA

Bourns

TVS DIODE 36V 58.1V SMC

FXLP34P5X

FXLP34P5X

ON Semiconductor

IC TRNSLTR UNIDIRECTIONAL SC70-5