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IXGH25N120

IXGH25N120

For Reference Only

Part Number IXGH25N120
PNEDA Part # IXGH25N120
Description IGBT 1200V 50A 200W TO247AD
Manufacturer IXYS
Unit Price Request a Quote
In Stock 5,238
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 19 - May 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXGH25N120 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXGH25N120
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXGH25N120, IXGH25N120 Datasheet (Total Pages: 2, Size: 45.89 KB)
PDFIXGH25N120 Datasheet Cover
IXGH25N120 Datasheet Page 2

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IXGH25N120 Specifications

ManufacturerIXYS
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)50A
Current - Collector Pulsed (Icm)100A
Vce(on) (Max) @ Vge, Ic3V @ 15V, 25A
Power - Max200W
Switching Energy11mJ (off)
Input TypeStandard
Gate Charge130nC
Td (on/off) @ 25°C100ns/650ns
Test Condition960V, 25A, 33Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247AD (IXGH)

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Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Supplier Device Package

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Supplier Device Package

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