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IXGK72N60C3H1

IXGK72N60C3H1

For Reference Only

Part Number IXGK72N60C3H1
PNEDA Part # IXGK72N60C3H1
Description IGBT TO264
Manufacturer IXYS
Unit Price Request a Quote
In Stock 2,466
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 15 - May 20 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXGK72N60C3H1 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXGK72N60C3H1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IXGK72N60C3H1 Specifications

ManufacturerIXYS
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)-
Current - Collector (Ic) (Max)-
Current - Collector Pulsed (Icm)-
Vce(on) (Max) @ Vge, Ic-
Power - Max-
Switching Energy-
Input Type-
Gate Charge-
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)-
Operating Temperature-
Mounting TypeThrough Hole
Package / CaseTO-264-3, TO-264AA
Supplier Device PackageTO-264 (IXGK)

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Manufacturer

IXYS

Series

HiPerFAST™

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

75A

Current - Collector Pulsed (Icm)

200A

Vce(on) (Max) @ Vge, Ic

2.3V @ 15V, 50A

Power - Max

300W

Switching Energy

1.5mJ (off)

Input Type

Standard

Gate Charge

110nC

Td (on/off) @ 25°C

50ns/200ns

Test Condition

480V, 50A, 2.7Ohm, 15V

Reverse Recovery Time (trr)

50ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-264-3, TO-264AA

Supplier Device Package

TO-264 (IXGK)

FID35-06C

IXYS

Manufacturer

IXYS

Series

-

IGBT Type

NPT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

38A

Current - Collector Pulsed (Icm)

-

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 25A

Power - Max

125W

Switching Energy

1.1mJ (on), 600µJ (off)

Input Type

Standard

Gate Charge

140nC

Td (on/off) @ 25°C

-

Test Condition

300V, 25A, 10Ohm, 15V

Reverse Recovery Time (trr)

50ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

i4-Pac™-5

Supplier Device Package

ISOPLUS i4-PAC™

HGT1S20N60A4S9A

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

70A

Current - Collector Pulsed (Icm)

280A

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 20A

Power - Max

290W

Switching Energy

105µJ (on), 150µJ (off)

Input Type

Standard

Gate Charge

142nC

Td (on/off) @ 25°C

15ns/73ns

Test Condition

390V, 20A, 3Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

TO-263AB

IXBX64N250

IXYS

Manufacturer

IXYS

Series

BIMOSFET™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

2500V

Current - Collector (Ic) (Max)

156A

Current - Collector Pulsed (Icm)

600A

Vce(on) (Max) @ Vge, Ic

3V @ 15V, 64A

Power - Max

735W

Switching Energy

-

Input Type

Standard

Gate Charge

400nC

Td (on/off) @ 25°C

49ns/232ns

Test Condition

1250V, 128A, 1Ohm, 15V

Reverse Recovery Time (trr)

160ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

PLUS247™-3

IRG4BC20KDSTRRP

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

16A

Current - Collector Pulsed (Icm)

32A

Vce(on) (Max) @ Vge, Ic

2.8V @ 15V, 9A

Power - Max

60W

Switching Energy

340µJ (on), 300µJ (off)

Input Type

Standard

Gate Charge

34nC

Td (on/off) @ 25°C

54ns/180ns

Test Condition

480V, 9A, 50Ohm, 15V

Reverse Recovery Time (trr)

37ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

D2PAK

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