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IXGQ20N120B

IXGQ20N120B

For Reference Only

Part Number IXGQ20N120B
PNEDA Part # IXGQ20N120B
Description IGBT 1200V 40A 190W TO3P
Manufacturer IXYS
Unit Price Request a Quote
In Stock 6,822
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXGQ20N120B Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXGQ20N120B
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXGQ20N120B, IXGQ20N120B Datasheet (Total Pages: 6, Size: 505.97 KB)
PDFIXGQ20N120BD1 Datasheet Cover
IXGQ20N120BD1 Datasheet Page 2 IXGQ20N120BD1 Datasheet Page 3 IXGQ20N120BD1 Datasheet Page 4 IXGQ20N120BD1 Datasheet Page 5 IXGQ20N120BD1 Datasheet Page 6

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IXGQ20N120B Specifications

ManufacturerIXYS
Series-
IGBT TypePT
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)40A
Current - Collector Pulsed (Icm)100A
Vce(on) (Max) @ Vge, Ic3.4V @ 15V, 20A
Power - Max190W
Switching Energy2.1mJ (off)
Input TypeStandard
Gate Charge62nC
Td (on/off) @ 25°C20ns/270ns
Test Condition960V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr)40ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-3P-3, SC-65-3
Supplier Device PackageTO-3P

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 45A

Power - Max

200W

Switching Energy

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Input Type

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Gate Charge

69nC

Td (on/off) @ 25°C

-

Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Package / Case

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Supplier Device Package

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Infineon Technologies

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Infineon Technologies

Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 16A

Power - Max

100W

Switching Energy

600µJ (on), 580µJ (off)

Input Type

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Gate Charge

67nC

Td (on/off) @ 25°C

60ns/160ns

Test Condition

480V, 16A, 23Ohm, 15V

Reverse Recovery Time (trr)

42ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

TO-220-3

Supplier Device Package

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ON Semiconductor

Manufacturer

ON Semiconductor

Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

2V @ 15V, 12A

Power - Max

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Switching Energy

380µJ (on), 900µJ (off)

Input Type

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Package / Case

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Supplier Device Package

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

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IGBT Type

Trench

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

76A

Current - Collector Pulsed (Icm)

105A

Vce(on) (Max) @ Vge, Ic

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Power - Max

268W

Switching Energy

390µJ (on), 632µJ (off)

Input Type

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Gate Charge

104nC

Td (on/off) @ 25°C

46ns/105ns

Test Condition

400V, 35A, 10Ohm, 15V

Reverse Recovery Time (trr)

120ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

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TO-247-3

Supplier Device Package

TO-247AD

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Littelfuse

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

440V

Current - Collector (Ic) (Max)

15A

Current - Collector Pulsed (Icm)

50A

Vce(on) (Max) @ Vge, Ic

2.2V @ 4V, 10A

Power - Max

107W

Switching Energy

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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