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IXGR35N120D1

IXGR35N120D1

For Reference Only

Part Number IXGR35N120D1
PNEDA Part # IXGR35N120D1
Description IGBT 1200V ISOPLUS247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 7,668
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 15 - Jun 20 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXGR35N120D1 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXGR35N120D1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IXGR35N120D1 Specifications

ManufacturerIXYS
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)-
Current - Collector Pulsed (Icm)-
Vce(on) (Max) @ Vge, Ic-
Power - Max-
Switching Energy-
Input TypeStandard
Gate Charge-
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)-
Operating Temperature-
Mounting TypeThrough Hole
Package / CaseISOPLUS247™
Supplier Device PackageISOPLUS247™

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

500A

Vce(on) (Max) @ Vge, Ic

3.2V @ 15V, 82A

Power - Max

1250W

Switching Energy

5mJ (on), 3.3mJ (off)

Input Type

Standard

Gate Charge

350nC

Td (on/off) @ 25°C

30ns/210ns

Test Condition

600V, 80A, 2Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-264-3, TO-264AA

Supplier Device Package

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Manufacturer

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Series

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IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

30A

Current - Collector Pulsed (Icm)

-

Vce(on) (Max) @ Vge, Ic

-

Power - Max

-

Switching Energy

-

Input Type

Standard

Gate Charge

-

Td (on/off) @ 25°C

-

Test Condition

-

Reverse Recovery Time (trr)

-

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

12-SIP

Supplier Device Package

12-SIP w/fin

Manufacturer

IXYS

Series

HiPerFAST™

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

20A

Current - Collector Pulsed (Icm)

100A

Vce(on) (Max) @ Vge, Ic

3V @ 15V, 12A

Power - Max

63W

Switching Energy

60µJ (off)

Input Type

Standard

Gate Charge

32nC

Td (on/off) @ 25°C

25ns/60ns

Test Condition

400V, 12A, 22Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

ISOPLUS220™

Supplier Device Package

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IRGPS66160DPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

240A

Current - Collector Pulsed (Icm)

360A

Vce(on) (Max) @ Vge, Ic

1.95V @ 15V, 120A

Power - Max

750W

Switching Energy

4.47mJ (on), 3.43mJ (off)

Input Type

Standard

Gate Charge

220nC

Td (on/off) @ 25°C

80ns/190ns

Test Condition

400V, 120A, 4.7Ohm, 15V

Reverse Recovery Time (trr)

95ns

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-274AA

Supplier Device Package

SUPER-247™ (TO-274AA)

Manufacturer

IXYS

Series

BIMOSFET™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

3000V

Current - Collector (Ic) (Max)

104A

Current - Collector Pulsed (Icm)

400A

Vce(on) (Max) @ Vge, Ic

3V @ 15V, 42A

Power - Max

500W

Switching Energy

-

Input Type

Standard

Gate Charge

200nC

Td (on/off) @ 25°C

72ns/445ns

Test Condition

1500V, 42A, 20Ohm, 15V

Reverse Recovery Time (trr)

1.7µs

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Supplier Device Package

TO-268

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