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IXSH24N60A

IXSH24N60A

For Reference Only

Part Number IXSH24N60A
PNEDA Part # IXSH24N60A
Manufacturer IXYS
Description IGBT 600V 48A 150W TO247
Unit Price
  • 1$ 0.0000
  • 100$ 0.0000
  • 500$ 0.0000
  • 1000$ 0.0000
  • 2500$ 0.0000
In Stock 4,662
Warehouses USA, Europe, China, Hong Kong SAR
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery
Estimated Delivery Dec 6 - Dec 11 (Choose Expedited Shipping)
Warranty Up to 1 year [PNEDA-Warranty]*

IXSH24N60A Resources

Brand IXYS
Mfr. Part NumberIXSH24N60A
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXSH24N60A, IXSH24N60A Datasheet (Total Pages: 2, Size: 111.82 KB)
PDFIXSH24N60A Datasheet Cover
IXSH24N60A Datasheet Page 2

IXSH24N60A Specifications

ManufacturerIXYS
SeriesHiPerFAST™
IGBT TypePT
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)48A
Current - Collector Pulsed (Icm)96A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 24A
Power - Max150W
Switching Energy2mJ (off)
Input TypeStandard
Gate Charge75nC
Td (on/off) @ 25°C100ns/450ns
Test Condition480V, 24A, 10Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247AD (IXSH)

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

48ns/123ns

Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

160A

Current - Collector Pulsed (Icm)

360A

Vce(on) (Max) @ Vge, Ic

1.95V @ 15V, 120A

Power - Max

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Switching Energy

1.8mJ (on), 4.41mJ (off)

Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

400V, 120A, 4.7Ohm, 15V

Reverse Recovery Time (trr)

202ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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APT64GA90LD30

Microsemi

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

117A

Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

1192µJ (on), 1088µJ (off)

Input Type

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Gate Charge

162nC

Td (on/off) @ 25°C

18ns/131ns

Test Condition

600V, 38A, 4.7Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Supplier Device Package

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

60A

Current - Collector Pulsed (Icm)

200A

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 30A

Power - Max

192W

Switching Energy

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Input Type

Standard

Gate Charge

220nC

Td (on/off) @ 25°C

-/210ns

Test Condition

600V, 30A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

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Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

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IGBT Type

Trench

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

16A

Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

30W

Switching Energy

17µJ (on), 110µJ (off)

Input Type

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Gate Charge

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Td (on/off) @ 25°C

30ns/55ns

Test Condition

300V, 8A, 5Ohm, 15V

Reverse Recovery Time (trr)

25ns

Operating Temperature

150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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