Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IXTA160N10T

IXTA160N10T

For Reference Only

Part Number IXTA160N10T
PNEDA Part # IXTA160N10T
Description MOSFET N-CH 100V 160A TO-263
Manufacturer IXYS
Unit Price Request a Quote
In Stock 8,100
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 7 - May 12 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTA160N10T Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTA160N10T
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IXTA160N10T Datasheet
  • where to find IXTA160N10T
  • IXYS

  • IXYS IXTA160N10T
  • IXTA160N10T PDF Datasheet
  • IXTA160N10T Stock

  • IXTA160N10T Pinout
  • Datasheet IXTA160N10T
  • IXTA160N10T Supplier

  • IXYS Distributor
  • IXTA160N10T Price
  • IXTA160N10T Distributor

IXTA160N10T Specifications

ManufacturerIXYS
SeriesTrenchMV™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C160A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs132nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds6600pF @ 25V
FET Feature-
Power Dissipation (Max)430W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263 (IXTA)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

The Products You May Be Interested In

Manufacturer

IXYS

Series

HiPerFET™, Polar3™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

132A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

39mOhm @ 66A, 10V

Vgs(th) (Max) @ Id

5V @ 8mA

Gate Charge (Qg) (Max) @ Vgs

250nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

18600pF @ 25V

FET Feature

-

Power Dissipation (Max)

1890W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PLUS264™

Package / Case

TO-264-3, TO-264AA

SI7430DP-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

26A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

8V, 10V

Rds On (Max) @ Id, Vgs

45mOhm @ 5A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

43nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1735pF @ 50V

FET Feature

-

Power Dissipation (Max)

5.2W (Ta), 64W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8

FDZ209N

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

5V

Rds On (Max) @ Id, Vgs

80mOhm @ 4A, 5V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

9nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

657pF @ 30V

FET Feature

-

Power Dissipation (Max)

2W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

12-BGA (2x2.5)

Package / Case

12-WFBGA

NTB52N10G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

52A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

30mOhm @ 26A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

135nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3150pF @ 25V

FET Feature

-

Power Dissipation (Max)

2W (Ta), 178W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

DMN313DLT-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

270mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

2Ohm @ 10mA, 4V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

0.5nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

36.3pF @ 5V

FET Feature

-

Power Dissipation (Max)

280mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-523

Package / Case

SOT-523

Recently Sold

ADSP-21487KSWZ-4BB

ADSP-21487KSWZ-4BB

Analog Devices

DSP/DSC

LTC2950IDDB-1#TRMPBF

LTC2950IDDB-1#TRMPBF

Linear Technology/Analog Devices

IC PUSH BUTTON ON/OFF CTRLR 8DFN

MT25QL01GBBB8E12-0SIT

MT25QL01GBBB8E12-0SIT

Micron Technology Inc.

IC FLASH 1G SPI 133MHZ 24TPBGA

LT8610ABHMSE#TRPBF

LT8610ABHMSE#TRPBF

Linear Technology/Analog Devices

IC REG BUCK ADJ 3.5A 16MSOP

ADR421ARMZ-REEL7

ADR421ARMZ-REEL7

Analog Devices

IC VREF SERIES 2.5V 8MSOP

EN5339QI

EN5339QI

Intel

DC DC CONVERTER 0.6-4.6V 14W

MAX31865ATP+

MAX31865ATP+

Maxim Integrated

IC RTD TO DIGITAL CONVERT 20QFN

FLZ6V8A

FLZ6V8A

ON Semiconductor

DIODE ZENER 6.5V 500MW SOD80

BAT41ZFILM

BAT41ZFILM

STMicroelectronics

DIODE SCHOTTKY 100V 200MA SOD123

2920L330/24MR

2920L330/24MR

Littelfuse

PTC RESET FUSE 24V 3.3A 2920

74HC123D

74HC123D

Toshiba Semiconductor and Storage

IC MULTIVIBRATR DUAL MONO 16SOIC

EMS22A50-D28-LT6

EMS22A50-D28-LT6

Bourns

ROTARY ENCODER MAGNETIC 1024PPR