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IXTA32N20T

IXTA32N20T

For Reference Only

Part Number IXTA32N20T
PNEDA Part # IXTA32N20T
Description MOSFET N-CH 200V 32A TO-263
Manufacturer IXYS
Unit Price Request a Quote
In Stock 5,094
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 18 - May 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTA32N20T Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTA32N20T
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTA32N20T, IXTA32N20T Datasheet (Total Pages: 6, Size: 206.26 KB)
PDFIXTA32N20T Datasheet Cover
IXTA32N20T Datasheet Page 2 IXTA32N20T Datasheet Page 3 IXTA32N20T Datasheet Page 4 IXTA32N20T Datasheet Page 5 IXTA32N20T Datasheet Page 6

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IXTA32N20T Specifications

ManufacturerIXYS
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs72mOhm @ 16A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs38nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1760pF @ 25V
FET Feature-
Power Dissipation (Max)200W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263 (IXTA)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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