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IXTF6N200P3

IXTF6N200P3

For Reference Only

Part Number IXTF6N200P3
PNEDA Part # IXTF6N200P3
Description MOSFET N-CH
Manufacturer IXYS
Unit Price Request a Quote
In Stock 7,470
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 19 - May 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTF6N200P3 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTF6N200P3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IXTF6N200P3 Specifications

ManufacturerIXYS
SeriesPolar™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)2000V
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4.2Ohm @ 3A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs143nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3700pF @ 25V
FET Feature-
Power Dissipation (Max)215W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageISOPLUS i4-PAC™
Package / CaseISOPLUSi5-Pak™

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