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IXTH2N300P3HV

IXTH2N300P3HV

For Reference Only

Part Number IXTH2N300P3HV
PNEDA Part # IXTH2N300P3HV
Description MOSFET N-CH 3000V 2A TO247HV
Manufacturer IXYS
Unit Price Request a Quote
In Stock 4,950
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 17 - Jun 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTH2N300P3HV Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTH2N300P3HV
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTH2N300P3HV, IXTH2N300P3HV Datasheet (Total Pages: 4, Size: 202.95 KB)
PDFIXTT2N300P3HV Datasheet Cover
IXTT2N300P3HV Datasheet Page 2 IXTT2N300P3HV Datasheet Page 3 IXTT2N300P3HV Datasheet Page 4

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IXTH2N300P3HV Specifications

ManufacturerIXYS
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)3000V
Current - Continuous Drain (Id) @ 25°C2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs21Ohm @ 1A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs73nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1890pF @ 25V
FET Feature-
Power Dissipation (Max)520W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247HV
Package / CaseTO-247-3 Variant

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