Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IXTH90N15T

IXTH90N15T

For Reference Only

Part Number IXTH90N15T
PNEDA Part # IXTH90N15T
Description MOSFET N-CH 150V 90A TO247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 3,294
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 30 - May 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTH90N15T Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTH90N15T
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTH90N15T, IXTH90N15T Datasheet (Total Pages: 6, Size: 193.08 KB)
PDFIXTH90N15T Datasheet Cover
IXTH90N15T Datasheet Page 2 IXTH90N15T Datasheet Page 3 IXTH90N15T Datasheet Page 4 IXTH90N15T Datasheet Page 5 IXTH90N15T Datasheet Page 6

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IXTH90N15T Datasheet
  • where to find IXTH90N15T
  • IXYS

  • IXYS IXTH90N15T
  • IXTH90N15T PDF Datasheet
  • IXTH90N15T Stock

  • IXTH90N15T Pinout
  • Datasheet IXTH90N15T
  • IXTH90N15T Supplier

  • IXYS Distributor
  • IXTH90N15T Price
  • IXTH90N15T Distributor

IXTH90N15T Specifications

ManufacturerIXYS
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25°C90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs20mOhm @ 45A, 10V
Vgs(th) (Max) @ Id4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs80nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds4100pF @ 25V
FET Feature-
Power Dissipation (Max)455W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247 (IXTH)
Package / CaseTO-247-3

The Products You May Be Interested In

IRLR8113PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

94A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

2.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

32nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2920pF @ 15V

FET Feature

-

Power Dissipation (Max)

89W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

AUXCLFZ24NSTRL

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

17A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

70mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

370pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 45W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

STB80NF55-08T4

STMicroelectronics

Manufacturer

STMicroelectronics

Series

STripFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

8mOhm @ 40A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

155nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3850pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

STF4NK50ZD

STMicroelectronics

Manufacturer

STMicroelectronics

Series

SuperMESH™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.7Ohm @ 1.5A, 10V

Vgs(th) (Max) @ Id

4.5V @ 50µA

Gate Charge (Qg) (Max) @ Vgs

12nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

310pF @ 25V

FET Feature

-

Power Dissipation (Max)

20W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220FP

Package / Case

TO-220-3 Full Pack

GA10JT12-263

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

FET Type

-

Technology

SiC (Silicon Carbide Junction Transistor)

Drain to Source Voltage (Vdss)

1200V

Current - Continuous Drain (Id) @ 25°C

25A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

120mOhm @ 10A

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

1403pF @ 800V

FET Feature

-

Power Dissipation (Max)

170W (Tc)

Operating Temperature

175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

-

Package / Case

-

Recently Sold

CTX01-15473

CTX01-15473

Eaton - Electronics Division

FIXED INDUCTOR

0217.500MXP

0217.500MXP

Littelfuse

FUSE GLASS 500MA 250VAC 5X20MM

BZV55C5V1

BZV55C5V1

Microsemi

DIODE ZENER 5.1V DO213AA

CY2305SXC-1

CY2305SXC-1

Cypress Semiconductor

IC CLK ZDB 5OUT 133MHZ 8SOIC

ELXY500ETC560MF15D

ELXY500ETC560MF15D

United Chemi-Con

CAP ALUM 56UF 20% 50V RADIAL

HV9910BLG-G

HV9910BLG-G

Microchip Technology

IC LED DRIVER CTRLR DIM 8SOIC

C8051F326-GM

C8051F326-GM

Silicon Labs

IC MCU 8BIT 16KB FLASH 28QFN

FSSD07UMX

FSSD07UMX

ON Semiconductor

IC MULTIPLEXER 24UMLP

NAND128W3A2BN6E

NAND128W3A2BN6E

Micron Technology Inc.

IC FLASH 128M PARALLEL 48TSOP

DF10M

DF10M

Diodes Incorporated

BRIDGE RECT 1PHASE 1KV 1A DFM

XCF32PVOG48C

XCF32PVOG48C

Xilinx

IC PROM SRL/PAR 1.8V 32M 48TSOP

ADUC7026BSTZ62

ADUC7026BSTZ62

Analog Devices

IC MCU 32BIT 62KB FLASH 80LQFP