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IXTK102N30P

IXTK102N30P

For Reference Only

Part Number IXTK102N30P
PNEDA Part # IXTK102N30P
Description MOSFET N-CH 300V 102A TO-264
Manufacturer IXYS
Unit Price Request a Quote
In Stock 5,850
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 17 - May 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTK102N30P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTK102N30P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTK102N30P, IXTK102N30P Datasheet (Total Pages: 5, Size: 225.23 KB)
PDFIXTK102N30P Datasheet Cover
IXTK102N30P Datasheet Page 2 IXTK102N30P Datasheet Page 3 IXTK102N30P Datasheet Page 4 IXTK102N30P Datasheet Page 5

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IXTK102N30P Specifications

ManufacturerIXYS
SeriesPolarHT™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)300V
Current - Continuous Drain (Id) @ 25°C102A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs33mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs224nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds7500pF @ 25V
FET Feature-
Power Dissipation (Max)700W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-264 (IXTK)
Package / CaseTO-264-3, TO-264AA

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