IXTM10P60
For Reference Only
| Part Number | IXTM10P60 |
| PNEDA Part # | IXTM10P60 |
| Description | POWER MOSFET TO-3 |
| Manufacturer | IXYS |
| Unit Price | Request a Quote |
| In Stock | 5,148 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 13 - Jun 18 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
IXTM10P60 Resources
| Brand | IXYS |
| ECAD Module |
|
| Mfr. Part Number | IXTM10P60 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- IXTM10P60 Datasheet
- where to find IXTM10P60
- IXYS
- IXYS IXTM10P60
- IXTM10P60 PDF Datasheet
- IXTM10P60 Stock
- IXTM10P60 Pinout
- Datasheet IXTM10P60
- IXTM10P60 Supplier
- IXYS Distributor
- IXTM10P60 Price
- IXTM10P60 Distributor
IXTM10P60 Specifications
| Manufacturer | IXYS |
| Series | - |
| FET Type | - |
| Technology | - |
| Drain to Source Voltage (Vdss) | - |
| Current - Continuous Drain (Id) @ 25°C | - |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Rds On (Max) @ Id, Vgs | - |
| Vgs(th) (Max) @ Id | - |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Vgs (Max) | - |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Operating Temperature | - |
| Mounting Type | - |
| Supplier Device Package | - |
| Package / Case | - |
The Products You May Be Interested In
|
Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 10.5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 11mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 26.7nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1281pF @ 15V FET Feature - Power Dissipation (Max) 900mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerDI3333-8 Package / Case 8-PowerVDFN |
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 75A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 8mOhm @ 52A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 60nC @ 5V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 2880pF @ 25V FET Feature - Power Dissipation (Max) 130W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-262 Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |
Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 22A (Ta), 90A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.8mOhm @ 30A, 10V Vgs(th) (Max) @ Id 4V @ 102µA Gate Charge (Qg) (Max) @ Vgs 143nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 12000pF @ 30V FET Feature - Power Dissipation (Max) 2.2W (Ta), 78W (Tc) Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package MG-WDSON-2, CanPAK M™ Package / Case 3-WDSON |
Manufacturer Infineon Technologies Series CoolMOS™ CFD2 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 11.4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 310mOhm @ 4.4A, 10V Vgs(th) (Max) @ Id 4.5V @ 400µA Gate Charge (Qg) (Max) @ Vgs 41nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 100V FET Feature - Power Dissipation (Max) 32W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220 Full Pack Package / Case TO-220-3 Full Pack |
Manufacturer Series NexFET™ FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 4A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 26mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id 1.05V @ 250µA Gate Charge (Qg) (Max) @ Vgs 7.5nC @ 4.5V Vgs (Max) -6V Input Capacitance (Ciss) (Max) @ Vds 1010pF @ 10V FET Feature - Power Dissipation (Max) 500mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 9-DSBGA Package / Case 9-UFBGA, DSBGA |
