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IXTM40N30

IXTM40N30

For Reference Only

Part Number IXTM40N30
PNEDA Part # IXTM40N30
Description POWER MOSFET TO-3
Manufacturer IXYS
Unit Price Request a Quote
In Stock 7,200
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 9 - May 14 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTM40N30 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTM40N30
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTM40N30, IXTM40N30 Datasheet (Total Pages: 4, Size: 615.71 KB)
PDFIXTM40N30 Datasheet Cover
IXTM40N30 Datasheet Page 2 IXTM40N30 Datasheet Page 3 IXTM40N30 Datasheet Page 4

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IXTM40N30 Specifications

ManufacturerIXYS
SeriesGigaMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)300V
Current - Continuous Drain (Id) @ 25°C40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs88mOhm @ 20A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs220nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4600pF @ 25V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-204AE
Package / CaseTO-204AE

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