Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IXTN40P50P

IXTN40P50P

For Reference Only

Part Number IXTN40P50P
PNEDA Part # IXTN40P50P
Description MOSFET P-CH 500V 40A SOT227
Manufacturer IXYS
Unit Price Request a Quote
In Stock 7,326
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 10 - May 15 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTN40P50P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTN40P50P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTN40P50P, IXTN40P50P Datasheet (Total Pages: 5, Size: 117.36 KB)
PDFIXTN40P50P Datasheet Cover
IXTN40P50P Datasheet Page 2 IXTN40P50P Datasheet Page 3 IXTN40P50P Datasheet Page 4 IXTN40P50P Datasheet Page 5

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IXTN40P50P Datasheet
  • where to find IXTN40P50P
  • IXYS

  • IXYS IXTN40P50P
  • IXTN40P50P PDF Datasheet
  • IXTN40P50P Stock

  • IXTN40P50P Pinout
  • Datasheet IXTN40P50P
  • IXTN40P50P Supplier

  • IXYS Distributor
  • IXTN40P50P Price
  • IXTN40P50P Distributor

IXTN40P50P Specifications

ManufacturerIXYS
SeriesPolarP™
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs230mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs205nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds11500pF @ 25V
FET Feature-
Power Dissipation (Max)890W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSOT-227B
Package / CaseSOT-227-4, miniBLOC

The Products You May Be Interested In

APT7F120B

Microsemi

Manufacturer

Microsemi Corporation

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1200V

Current - Continuous Drain (Id) @ 25°C

7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.9Ohm @ 3A, 10V

Vgs(th) (Max) @ Id

5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

80nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2565pF @ 25V

FET Feature

-

Power Dissipation (Max)

335W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247 [B]

Package / Case

TO-247-3

DMN60H4D5SK3-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

2.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4.5Ohm @ 1A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8.2nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

273.5pF @ 25V

FET Feature

-

Power Dissipation (Max)

41W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252, (D-Pak)

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

SIR871DP-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

48A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

20mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2.6V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

90nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3395pF @ 50V

FET Feature

-

Power Dissipation (Max)

89W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8

SIHG23N60E-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

E

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

23A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

158mOhm @ 12A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

95nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2418pF @ 100V

FET Feature

-

Power Dissipation (Max)

227W (Tc)

Operating Temperature

-55°C ~ 150°C (TA)

Mounting Type

Through Hole

Supplier Device Package

TO-247AC

Package / Case

TO-247-3

SI2341DS-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

2.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

72mOhm @ 2.8A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

400pF @ 15V

FET Feature

-

Power Dissipation (Max)

710mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3 (TO-236)

Package / Case

TO-236-3, SC-59, SOT-23-3

Recently Sold

M28W160CT70N6E

M28W160CT70N6E

Micron Technology Inc.

IC FLASH 16M PARALLEL 48TSOP

WSL25122L000FEA

WSL25122L000FEA

Vishay Dale

RES 0.002 OHM 1% 1W 2512

S558-5999-M8-F

S558-5999-M8-F

Bel Fuse

MODULE XFRMR LAN GIGABIT 24P SMD

1206L110THYR

1206L110THYR

Littelfuse

PTC RESET FUSE 8V 1.1A 1206

LQH2MCN100K02L

LQH2MCN100K02L

Murata

FIXED IND 10UH 225MA 1.2 OHM SMD

PIC18F6527-I/PT

PIC18F6527-I/PT

Microchip Technology

IC MCU 8BIT 48KB FLASH 64TQFP

IHLP2525CZER2R2M01

IHLP2525CZER2R2M01

Vishay Dale

FIXED IND 2.2UH 8A 20 MOHM SMD

AP2111MPG-13

AP2111MPG-13

Diodes Incorporated

IC USB SWITCH 2.45A CURR 8MSOP

B1100-13-F

B1100-13-F

Diodes Incorporated

DIODE SCHOTTKY 100V 1A SMA

SMAZ18-13-F

SMAZ18-13-F

Diodes Incorporated

DIODE ZENER 18V 1W SMA

LT3080EMS8E#PBF

LT3080EMS8E#PBF

Linear Technology/Analog Devices

IC REG LINEAR POS ADJ 1.1A 8MSOP

SMCJ24CAHE3/57T

SMCJ24CAHE3/57T

Vishay Semiconductor Diodes Division

TVS DIODE 24V 38.9V DO214AB