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SIHG23N60E-GE3

SIHG23N60E-GE3

For Reference Only

Part Number SIHG23N60E-GE3
PNEDA Part # SIHG23N60E-GE3
Description MOSFET N-CH 600V 23A TO247AC
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 16,932
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 17 - Jun 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIHG23N60E-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIHG23N60E-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIHG23N60E-GE3, SIHG23N60E-GE3 Datasheet (Total Pages: 8, Size: 189 KB)
PDFSIHG23N60E-GE3 Datasheet Cover
SIHG23N60E-GE3 Datasheet Page 2 SIHG23N60E-GE3 Datasheet Page 3 SIHG23N60E-GE3 Datasheet Page 4 SIHG23N60E-GE3 Datasheet Page 5 SIHG23N60E-GE3 Datasheet Page 6 SIHG23N60E-GE3 Datasheet Page 7 SIHG23N60E-GE3 Datasheet Page 8

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SIHG23N60E-GE3 Specifications

ManufacturerVishay Siliconix
SeriesE
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C23A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs158mOhm @ 12A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs95nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2418pF @ 100V
FET Feature-
Power Dissipation (Max)227W (Tc)
Operating Temperature-55°C ~ 150°C (TA)
Mounting TypeThrough Hole
Supplier Device PackageTO-247AC
Package / CaseTO-247-3

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