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IXTP05N100M

IXTP05N100M

For Reference Only

Part Number IXTP05N100M
PNEDA Part # IXTP05N100M
Description MOSFET N-CH 1000V 700MA TO-220
Manufacturer IXYS
Unit Price Request a Quote
In Stock 2,376
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTP05N100M Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTP05N100M
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTP05N100M, IXTP05N100M Datasheet (Total Pages: 4, Size: 107.75 KB)
PDFIXTP05N100M Datasheet Cover
IXTP05N100M Datasheet Page 2 IXTP05N100M Datasheet Page 3 IXTP05N100M Datasheet Page 4

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IXTP05N100M Specifications

ManufacturerIXYS
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000V
Current - Continuous Drain (Id) @ 25°C700mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs17Ohm @ 375mA, 10V
Vgs(th) (Max) @ Id4.5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs7.8nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds260pF @ 25V
FET Feature-
Power Dissipation (Max)25W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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