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IXTP2N80

IXTP2N80

For Reference Only

Part Number IXTP2N80
PNEDA Part # IXTP2N80
Description MOSFET N-CH 800V 2A TO-220
Manufacturer IXYS
Unit Price Request a Quote
In Stock 3,492
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 17 - May 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTP2N80 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTP2N80
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IXTP2N80 Specifications

ManufacturerIXYS
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs6.2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs22nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds440pF @ 25V
FET Feature-
Power Dissipation (Max)54W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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