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IXTQ200N10T

IXTQ200N10T

For Reference Only

Part Number IXTQ200N10T
PNEDA Part # IXTQ200N10T
Description MOSFET N-CH 100V 200A TO-3P
Manufacturer IXYS
Unit Price Request a Quote
In Stock 6,372
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTQ200N10T Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTQ200N10T
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTQ200N10T, IXTQ200N10T Datasheet (Total Pages: 5, Size: 169.87 KB)
PDFIXTQ200N10T Datasheet Cover
IXTQ200N10T Datasheet Page 2 IXTQ200N10T Datasheet Page 3 IXTQ200N10T Datasheet Page 4 IXTQ200N10T Datasheet Page 5

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IXTQ200N10T Specifications

ManufacturerIXYS
SeriesTrenchMV™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C200A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs5.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs152nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds9400pF @ 25V
FET Feature-
Power Dissipation (Max)550W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3P
Package / CaseTO-3P-3, SC-65-3

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