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IXTT110N10P

IXTT110N10P

For Reference Only

Part Number IXTT110N10P
PNEDA Part # IXTT110N10P
Description MOSFET N-CH 100V 110A TO-268
Manufacturer IXYS
Unit Price Request a Quote
In Stock 6,156
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 15 - Jun 20 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTT110N10P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTT110N10P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTT110N10P, IXTT110N10P Datasheet (Total Pages: 5, Size: 170.9 KB)
PDFIXTT110N10P Datasheet Cover
IXTT110N10P Datasheet Page 2 IXTT110N10P Datasheet Page 3 IXTT110N10P Datasheet Page 4 IXTT110N10P Datasheet Page 5

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IXTT110N10P Specifications

ManufacturerIXYS
SeriesPolarHT™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs15mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs110nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3550pF @ 25V
FET Feature-
Power Dissipation (Max)480W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-268
Package / CaseTO-268-3, D³Pak (2 Leads + Tab), TO-268AA

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