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IXTY1R6N50D2

IXTY1R6N50D2

For Reference Only

Part Number IXTY1R6N50D2
PNEDA Part # IXTY1R6N50D2
Description MOSFET N-CH 500V 1.6A DPAK
Manufacturer IXYS
Unit Price Request a Quote
In Stock 4,626
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 21 - May 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTY1R6N50D2 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTY1R6N50D2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTY1R6N50D2, IXTY1R6N50D2 Datasheet (Total Pages: 5, Size: 179.63 KB)
PDFIXTA1R6N50D2 Datasheet Cover
IXTA1R6N50D2 Datasheet Page 2 IXTA1R6N50D2 Datasheet Page 3 IXTA1R6N50D2 Datasheet Page 4 IXTA1R6N50D2 Datasheet Page 5

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IXTY1R6N50D2 Specifications

ManufacturerIXYS
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C1.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs2.3Ohm @ 800mA, 0V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs23.7nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds645pF @ 25V
FET FeatureDepletion Mode
Power Dissipation (Max)100W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252, (D-Pak)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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